Weak antilocalization in Cd3As2 thin films

被引：98

作者：

Zhao, Bo ^{[1
,2
]}

Cheng, Peihong ^{[3
,4
]}

Pan, Haiyang ^{[1
,2
]}

Zhang, Shuai ^{[1
,2
]}

Wang, Baigeng ^{[1
,2
]}

Wang, Guanghou ^{[1
,2
]}

Xiu, Faxian ^{[3
,4
]}

Song, Fengqi ^{[1
,2
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Coll Phys, Nanjing 210093, Jiangsu, Peoples R China

[3] Fudan Univ, State Key Lab Surface Phys, Collaborat Innovat Ctr Adv Microstruct, Shanghai 200433, Peoples R China

[4] Fudan Univ, Dept Phys, Collaborat Innovat Ctr Adv Microstruct, Shanghai 200433, Peoples R China

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

中国国家自然科学基金;

关键词：

TOPOLOGICAL INSULATORS; QUANTUM OSCILLATIONS; MAGNETORESISTANCE; LOCALIZATION; STATES;

D O I：

10.1038/srep22377

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a similar to 50 nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electronelectron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasitwo- dimensional film.

引用

页数：7

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