Photothermal investigations of doping effects on opto-thermal properties of bulk GaSb

被引：8

作者：

Abroug, Sameh ^{[1
]}

Saadallah, Faycel ^{[1
]}

Yacoubi, Noureddine ^{[1
]}

机构：

[1] Photothermal Lab, Nabeul, Tunisia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 484卷 / 1-2期

关键词：

Semiconductors; Heat conduction; Light absorption and reflection; Impurities in semiconductors; BAND-GAP SHRINKAGE; GALLIUM ANTIMONIDE; OPTICAL-ABSORPTION; DOPED GASB; SPECTROSCOPY;

D O I：

10.1016/j.jallcom.2009.05.040

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaSb is a direct gap semiconductor (0.72 ev) having good carriers motility and significant electro-optical potential in the near IR range. As substrate or active layer, GaSb can be employed in conjunction with many semiconductors such as (AlGa)Sb or In(AsSb) and has interesting hetero junction potential for detectors, lasers and quantum well structures. The aim of this work is to investigate the influence of doping on the opto-thermal properties (optical absorption, refractive index and thermal diffusivity) of doped and undoped GaSb bulk throw, the phothermal deflection and spectroscopic reflectivity. It is found that absorption below the gap and thermal diffusivity increases with doping concentration. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：772 / 776

页数：5

共 18 条

[1] Determination of doping effects on Si and GaAs bulk samples properties by photothermal investigations [J].