Study of PbTe epitaxial layers grown directly over silicon wafers

被引：0

作者：

Guimaraes, S

da Silva, SDFF

机构：

[1] Ctr Tecn Aeroesp, Div Mat AMR, Inst Aeronaut & Espaco, BR-12228904 Sao Jose Dos Campos, SP, Brazil

[2] Fac Engn Quim Lorena, Lorena, SP, Brazil

来源：

ADVANCED MATERIALS FORUM I | 2002年 / 230-2卷

关键词：

epitaxial growth; hot-wall epitaxial system; infrared detectors; PbTe; Si;

D O I：

10.4028/www.scientific.net/KEM.230-232.607

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Scanning electronic microscopy (SEM) was used in this work in order to study the surface quality of Lead Telluride (PbTe), n-type, epitaxial layers, grown directly over single crystal Silicon (Si) p-type wafers. The n-PbTe/p-Si heterojunction is used as thermal infrared (IR) detector, which work at room temperature. Besides the epilayers quality, it was also planned, to improve the cleaning Si surface procedure, decide which substrate resistivity is more appropriated and at what thickness the epilayers absorb more infrared radiation.

引用

页码：607 / 610

页数：4

共 8 条

[1] GROWTH OF NARROW-GAP EPILAYERS AND P-N-JUNCTIONS ON SILICON FOR INFRARED DETECTORS ARRAYS [J].