Current-induced magnetization switching in a chemically disordered A1 CoPt single layer

被引：6

作者：

Chen, Zehan ^{[1
]}

Liu, Lin ^{[1
]}

Ye, Zhixiang ^{[1
]}

Chen, Zhiren ^{[1
]}

Zheng, Hongnan ^{[1
]}

Jia, Wei ^{[1
]}

Zeng, Qi ^{[1
]}

Wang, Ning ^{[1
]}

Xiang, Boyuan ^{[1
]}

Lin, Tao ^{[1
]}

Liu, Jing ^{[1
]}

Qiu, Mingxia ^{[1
]}

Li, Shunpu ^{[1
]}

Shi, Ji ^{[2
]}

Han, Peigang ^{[1
]}

An, Hongyu ^{[1
]}

机构：

[1] Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China

[2] Tokyo Inst Technol, Sch Mat & Chem Technol, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 03期

基金：

中国国家自然科学基金;

关键词：

spin-orbit torque; magnetization switching; CoPt; perpendicular magnetic anisotropy; spintronics;

D O I：

10.35848/1882-0786/abdcd5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first demonstration of current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained over a wide composition range of A1 Co1-xPtx single layers, which allows the fabrication of a perpendicularly magnetized CoPt single layer with a composition gradient that breaks the inversion symmetry of the structure. By fabricating a CoPt single layer with a gradient, we were able to evaluate spin-orbit torque (SOT) efficiency and successfully realize SOT-induced magnetization switching. Our study provides an approach for realizing current-induced magnetization in ferromagnetic single layers without attaching SOT source materials.

引用

页数：3

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