Growth and shape of indium islands on molybdenum at micro-roughened spots created by femtosecond laser pulses

被引：11

作者：

Ringleb, F. ^{[1
]}

Eylers, K. ^{[1
]}

Teubner, Th. ^{[1
]}

Schramm, H. -P. ^{[1
]}

Symietz, C. ^{[2
]}

Bonse, J. ^{[2
]}

Andree, S. ^{[2
]}

Heidmann, B. ^{[3
,4
]}

Schmid, M. ^{[3
,4
]}

Krueger, J. ^{[2
]}

Boeck, T. ^{[1
]}

机构：

[1] Leibniz Inst Crystal Growth, Max Born Str 2, D-12489 Berlin, Germany

[2] Bundesanstalt Mat Forsch & Prufung BAM, Unter Eichen 87, D-12205 Berlin, Germany

[3] FUB, Dept Phys, Arnimalle 14, D-14195 Berlin, Germany

[4] HZB, Nanoopt Konzepte PV, Hahn Meitner Pl 1, D-14109 Berlin, Germany

来源：

APPLIED SURFACE SCIENCE | 2017年 / 418卷

关键词：

Indium islands; Fs laser patterning; Diffusion; CIGSe micro cells; CU(IN;

D O I：

10.1016/j.apsusc.2016.11.135

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium islands on molybdenum coated glass can be grown in ordered arrays by surface structuring using a femtosecond laser. The effect of varying the molybdenum coated glass substrate temperature and the indium deposition rate on island areal density, volume and geometry is investigated and evaluated in a physical vapor deposition (PVD) process. The joined impact of growth conditions and spacing of the femtosecond laser structured spots on the arrangement and morphology of indium islands is demonstrated. The results yield a deeper understanding of the island growth and its precise adjustment to industrial requirenients, which is indispensable for a technological application of such structures at a high throughput, for instance as precursors for the preparation of Cu(ln,Ga)Se-2 micro concentrator solar cells. (C) 2016 Elsevier B.V. All rights reserved,

引用

页码：548 / 553

页数：6

共 14 条

[1] The surface tension of indium: Methods and results of investigations
Alchagirov, B. B.
Dadashev, R. Kh.
Dyshekova, F. F.
Elimkhanov, D. Z.
[J]. HIGH TEMPERATURE, 2014, 52 (06) : 920 - 938
[2] Algora C., 2016, Handbook of Concentrator Photopholtaic Technology
[3] [Anonymous], J PHYS D
[4] [Anonymous], INT J PHOTOENERGY
[5] SCALING ANALYSIS OF DIFFUSION-MEDIATED ISLAND GROWTH IN SURFACE-ADSORPTION PROCESSES
BARTELT, MC
EVANS, JW
[J]. PHYSICAL REVIEW B, 1992, 46 (19): : 12675 - 12687
[6] B┬u├▒uerle D., 2013, LASER PROCESSING CHE
[7] Green MA, 2016, PROG PHOTOVOLTAICS, V24, P3, DOI [10.1002/pip.2728, 10.1002/pip.892, 10.1002/pip.2855]
[8] A technique for the measurement of surface diffusion coefficient and activation energy of Ge adatom on Si(001)
Kim, HJ
Zhao, ZM
Liu, J
Ozolins, V
Chang, JY
Xie, YH
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) : 6065 - 6071
[9] Observation of change in critical thickness of In droplet formation on GaAs(100)
Lee, J. H.
Wang, Zh M.
Salamo, G. J.
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (17)
[10] Ohring M, 2001, Materials science of thin films, deposition and structure

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