High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch Employing Extrinsic Photoconductivity

被引：18

作者：

Yuan, Jianqiang ^{[1
]}

Xie, Weiping ^{[2
]}

Liu, Hongwei ^{[2
]}

Liu, Jinfeng ^{[2
]}

Li, Hongtao ^{[2
]}

Wang, Xinxin ^{[1
]}

Jiang, Weihua ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

[2] China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Peoples R China

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2009年 / 37卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Gallium arsenide (GaAs); high-power microwaves; photoconductive semiconductor switches (PCSSs);

D O I：

10.1109/TPS.2009.2022013

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A photoconductive semiconductor switch (PCSS) with a gap of 0.018 m was fabricated from semi-insulating GaAs. Illuminated by a laser pulse with varying optical energies at a wavelength of 1064 nm, the photoconductivity tests of the PCSS were performed at different bias voltages. In nonlinear mode, by comparing the charge initially stored in the capacitors and the charge through the switch, it is found that the end of lock-on phase is not always due to the fact that the energy has been dumped from the charging system. The threshold of incident optical energy and the ON-state resistance are analyzed and calculated. The PCSS failed at a bias voltage of 32 kV because of surface flashover.

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