Design and Performance of a Wideband Ka-Band 5-b MMIC Phase Shifter

被引：21

作者：

Zheng, Qin ^{[1
]}

Wang, Zhiyu ^{[1
]}

Wang, Kangrui ^{[1
]}

Wang, Gang ^{[1
]}

Xu, Hui ^{[1
]}

Wang, Liping ^{[1
]}

Chen, Wei ^{[1
]}

Zhou, Min ^{[1
]}

Huang, Zhengliang ^{[1
]}

Yu, Faxin ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Aeronaut & Astronaut, Hangzhou 310027, Zhejiang, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 05期

基金：

美国国家科学基金会;

关键词：

InGaAs pHEMT; Ka-band; monolithic microwave integrated circuit (MMIC); phase shifter;

D O I：

10.1109/LMWC.2017.2690828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the design and performance of a Ka-band 5-b monolithic microwave integrated circuit phase shifter is presented. In the 180 degrees phase bit, a developed switched-path-type topology is employed in order to extend the bandwidth and achieve good phase shifting characteristics. The fabricated phase shifter demonstrates an rms phase error of less than 4.7 degrees and an rms amplitude error of less than 0.6 dB over the frequency band from 31 to 40 GHz. The input and output return loss is measured to be better than 9 dB, and the chip size is 2.55 mm x 1.3 mm.

引用

页码：482 / 484

页数：3

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