Nanofabrication on a Si surface by slow highly charged ion impact

被引：9

作者：

Tona, Masahide ^{[1
]}

Watanabe, Hirofumi

Takahashi, Satoshi

Nakamura, Nobuyuki

Yoshiyasu, Nobuo

Sakurai, Makoto

Terui, Toshifumi

Mashiko, Shinro

Yamada, Chikashi

Ohtani, Shunsuke

机构：

[1] Univ Electrocommun, Inst Laser Sci, Chofu, Tokyo 1828585, Japan

[2] Univ Electrocommun, Dept Appl Phys & Chem, Chofu, Tokyo 1828585, Japan

[3] Japan Sci & Technol Agcy, Chofu, Tokyo 1828585, Japan

[4] Kobe Univ, Dept Phys, Kobe, Hyogo 6578501, Japan

[5] Natl Inst Informat & Commun Technol, Kobe, Hyogo 6512492, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 256卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

highly charged ion (HCI); potential sputtering; Si(111)-(7 x 7) surface; highly oriented pyrolytic graphite (HOPG) surface;

D O I：

10.1016/j.nimb.2006.12.057

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have observed surface chemical reactions which occur at the impact sites on a Si(111)-(7 x 7) surface and a highly oriented pyrolytic graphite (HOPG) surface bombarded by highly charged ions (HCIs) by using a scanning tunneling microscope (STM). Crater structures are formed on the Si(111)-(7 x 7) surface by single I50+-impacts. STM-observation for the early step of oxidation on the surface suggests that the impact site is so active that dangling bonds created by HCI impacts are immediately quenched by reaction with residual gas molecules. We show also the selective adsorption of organic molecules at a HCI-induced impact site on the HOPG surface. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：543 / 546

页数：4

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