Tuning the metal-insulator transition of vanadium dioxide thin films using a stretchable structure

被引:8
作者
Liao, Feiyi [1 ]
Yan, Zhuocheng [1 ]
Liang, Weizheng [1 ]
Yao, Guang [1 ]
Huang, Zhenlong [1 ]
Gao, Min [1 ,2 ]
Pan, Taisong [1 ]
Zhang, Yin [1 ]
Feng, Xue [3 ]
Lin, Yuan [1 ,2 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
[2] Univ Elect Sci & Technol China, Med Informat Ctr, Chengdu 610054, Sichuan, Peoples R China
[3] Tsinghua Univ, Dept Engn Mech, AML, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
VO2 thin films; Transfer printing; Metal-insulator transition; Thermal expansion; External mechanical strain; PHASE-TRANSITION; VO2; ADHESION; DEVICES; V2O4;
D O I
10.1016/j.jallcom.2016.12.063
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using the external mechanical strain to tune the metal-insulator transition (MIT) properties of VO2 thin films may break the limits of strain engineering methods via lattice mismatching. Herein, a method of transfer printing was used to achieve VO2 thin films on flexible and stretchable PDMS (polydimethylsiloxane) substrates. Finite elements analysis was performed to analyze the strain states imposed in the VO2 thin films and the electrical measurements were carried out to check the MIT behaviors. It is shown that a reliable tuning of strain and MIT behavior of VO2 thin films under the brittle fracture criteria can be achieved. The results have demonstrated the feasibility of tailoring the MIT behavior of VO2 thin films via controllable external strain and may help expand the application of VO2 thin films in flexible and stretchable devices. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:468 / 474
页数:7
相关论文
共 39 条
[1]   Evidence of a pressure-induced metallization process in monoclinic VO2 [J].
Arcangeletti, E. ;
Baldassarre, L. ;
Di Castro, D. ;
Lupi, S. ;
Malavasi, L. ;
Marini, C. ;
Perucchi, A. ;
Postorino, P. .
PHYSICAL REVIEW LETTERS, 2007, 98 (19)
[2]  
Armani D., 1999, MEMS 99
[3]   Near-zero IR transmission in the metal-insulator transition of VO2 thin films [J].
Balu, R. ;
Ashrit, P. V. .
APPLIED PHYSICS LETTERS, 2008, 92 (02)
[4]  
BERGLUND CN, 1969, PHYS REV, V185, P1022, DOI 10.1103/PhysRev.185.1022
[5]   Dynamical singlets and correlation-assisted peierls transition in VO2 -: art. no. 026404 [J].
Biermann, S ;
Poteryaev, A ;
Lichtenstein, AI ;
Georges, A .
PHYSICAL REVIEW LETTERS, 2005, 94 (02) :1-4
[6]  
Cao J, 2009, NAT NANOTECHNOL, V4, P732, DOI [10.1038/NNANO.2009.266, 10.1038/nnano.2009.266]
[7]   Nanoindentation of polydimethylsiloxane elastomers: Effect of crosslinking, work of adhesion, and fluid environment on elastic modulus [J].
Carrillo, F ;
Gupta, S ;
Balooch, M ;
Marshall, SJ ;
Marshall, GW ;
Pruitt, L ;
Puttlitz, CM .
JOURNAL OF MATERIALS RESEARCH, 2005, 20 (10) :2820-2830
[8]   Ultra-broadband femtosecond measurements of the photo-induced phase transition in VO2:: From the mid-IR to the hard x-rays [J].
Cavalleri, A ;
Rini, M ;
Schoenlein, RW .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (01)
[9]   Gate-field-induced phase transitions in VO2: Monoclinic metal phase separation and switchable infrared reflections [J].
Chen, Changhong ;
Wang, Renfan ;
Shang, Lang ;
Guo, Chongfeng .
APPLIED PHYSICS LETTERS, 2008, 93 (17)
[10]   Interfacial Failure in Flexible Electronic Devices [J].
Chen, Hang ;
Lu, Bing-Wei ;
Lin, Yuan ;
Feng, Xue .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (01) :132-134