The effect of surface cleaning on current collapse in AlGaN/GaN HEMTs

被引：17

作者：

Bardwell, J. A. ^{[1
]}

Haffouz, S. ^{[1
]}

McKinnon, W. R. ^{[1
]}

Storey, C. ^{[1
]}

Tang, H. ^{[1
]}

Sproule, G. I. ^{[1
]}

Roth, D. ^{[1
]}

Wang, R. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 02期

关键词：

D O I：

10.1149/1.2402479

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Current collapse is a limiting factor in the performance of AlGaN/GaN high electron mobility transistors (HEMTs), and can be ameliorated by silicon nitride passivation. The effect of three types of surface cleaning prior to the application of a silicon nitride passivation layer was studied. The best results were obtained when the wafers were cleaned using an air plasma descum followed by an HCl dip prior to the deposition of the silicon nitride passivation. Auger electron spectroscopy depth profiling indicated that the degree of collapse was correlated with the amount of residual carbon contamination at the silicon nitride/AlGaN interface. (c) 2006 The Electrochemical Society.

引用

页码：H46 / H49

页数：4

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