Highly efficient crossing structure for silicon-on-insulator waveguides

被引：101

作者：

Sanchis, Pablo ^{[1
]}

Villalba, Pablo ^{[2
]}

Cuesta, Francisco ^{[2
]}

Hakansson, Andreas ^{[2
]}

Griol, Amadeu ^{[1
]}

Galan, Jose V. ^{[1
]}

Brimont, Antoine ^{[1
]}

Marti, Javier ^{[1
]}

机构：

[1] Univ Politecn Valencia, Valencia Nanophoton Technol Ctr, Valencia 46022, Spain

[2] DAS Photon, Valencia 46022, Spain

来源：

OPTICS LETTERS | 2009年 / 34卷 / 18期

关键词：

CROSSTALK;

D O I：

10.1364/OL.34.002760

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A compact waveguide crossing structure with low transmission losses and negligible crosstalk is demonstrated for silicon-on-insulator circuits. The crossing structure is based on a mode expander optimized by means of a genetic algorithm leading to transmission losses lower than 0.2 dB and crosstalk and reflection losses below 40 dB in a broad bandwidth of 20 nm. Furthermore, the resulting crossing structure has a footprint of only 6 x 6 mu m(2) and does not require any additional fabrication steps. (C) 2009 Optical Society of America

引用

页码：2760 / 2762

页数：3

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