BaSnO3 as a channel material in perovskite oxide heterostructures

被引：85

作者：

Krishnaswamy, Karthik ^{[1
]}

Bjaalie, Lars ^{[2
]}

Himmetoglu, Burak ^{[2
,3
]}

Janotti, Anderson ^{[2
,4
]}

Gordon, Luke ^{[2
]}

Van de Walle, Chris G. ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Ctr Comp Sci, Calif NanoSyst Inst, Santa Barbara, CA 93106 USA

[4] Univ Delaware, Mat Sci & Engn, Newark, DE 19716 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 08期

关键词：

SRTIO3;

D O I：

10.1063/1.4942366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BaSnO3 (BSO) is a transparent perovskite oxide with high room-temperature mobility, a property that is highly desirable for a channel material in transistors. However, its low density of states (DOS) makes it challenging to confine a high-density two-dimensional electron gas (2DEG). Using hybrid density functional theory, we calculate the band structure of BSO, its DOS, and its band offsets with candidate barrier materials, such as SrTiO3 (STO), LaInO3, and KTaO3. With the calculated material parameters as input, Schrodinger-Poisson simulations are then performed on BSO heterostructures to quantitatively address the issue of 2DEG confinement. The BSO/STO interface with a conduction-band offset of 1.14 eV limits the 2DEG density confined within BSO to 8 x 10(13) cm(-2). Strategies to improve the confinement via band-offset engineering are discussed. (C) 2016 AIP Publishing LLC.

引用

页数：4

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