Self-aligned In0.53Ga0.47As MOSFETs with Atomic Layer Deposited Al2O3, ZrO2, and Stacked Al2O3/ZrO2 Gate Dielectrics

被引：1

作者：

Zhao, Han ^{[1
]}

Lee, Jack C. ^{[1
]}

机构：

[1] Univ Texas Austin, Austin, TX 78758 USA

来源：

2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS | 2009年

关键词：

InGaAs; MOSFETs; Al(2)O(3); ZrO(2);

D O I：

10.1109/ICICDT.2009.5166302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scaling characteristics of self-aligned In(0.53)Ga(0.47)As n-MOSFETs with atomic layer deposited (ALD) Al(2)O(3) and ZrO(2) gate dielectrics are evaluated. Although ZrO(2) shows promise of scalability to lower capacitance equivalent thickness (CET) compared to Al(2)O(3), stacked bilayer Al(2)O(3)/ZrO(2) gate dielectric enables further improvement in subthreshold swing and transconductance than single ZrO(2) film. In addition, the bilayer design also shows further scalability with merely 5 angstrom Al(2)O(3) while improving the MOSFETs performance.

引用

页码：229 / 232

页数：4

共 4 条

[1]

Geol N., 2008, INT EL DEV M, V363

[2]

OK I, 2008, DEV RES C, P91

[3] High mobility III-V MOSFETs for RF and digital applications [J].

Passlack, M. ;

Zurcher, P. ;

Rajagopalan, K. ;

Droopad, R. ;

Abrokwah, J. ;

Tutt, M. ;

Park, Y. -B. ;

Johnson, E. ;

Hartin, O. ;

Zlotnicka, A. ;

Fejes, P. ;

Hill, R. J. W. ;

Moran, D. A. J. ;

Li, X. ;

Zhou, H. ;

Macintyre, D. ;

Thoms, S. ;

Asenov, A. ;

Kalna, K. ;

Thayne, I. G. .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :621-+

[4] High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm [J].

Xuan, Y. ;

Wu, Y. Q. ;

Ye, P. D. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) :294-296

← 1 →