Surface Passivation and Transfer Doping of Silicon Nanowires

被引：63

作者：

Guo, Chun-Sheng ^{[1
,2
]}

Luo, Lin-Bao ^{[1
,2
]}

Yuan, Guo-Dong ^{[1
,2
]}

Yang, Xiao-Bao ^{[1
,2
]}

Zhang, Rui-Qin ^{[1
,2
]}

Zhang, Wen-Jun ^{[1
,2
]}

Lee, Shuit-Tong ^{[1
,2
]}

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2009年 / 48卷 / 52期

关键词：

adsorption; doping; silicon nanowires; surface passivation; transport properties; TRANSPORT-PROPERTIES; BUILDING-BLOCKS; FABRICATION; TRANSISTORS; NANOBELTS; ARRAYS; FILMS;

D O I：

10.1002/anie.200904890

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Staying on top: Altering the surface of silicon nanowires (SiNWs) by terminating the surface with different species and/or introducing surface adsorbates can change the electrical properties of the SiNWs. Such easy, nondestructive conductivity modification would expand possible applications of SiNWs. © 2009 Wiley-VCH Verlag GmbH & Co. KGaA.

引用

页码：9896 / 9900

页数：5

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