Surface Passivation and Transfer Doping of Silicon Nanowires

被引：63
作者：
Guo, Chun-Sheng [1 ,2 ]
Luo, Lin-Bao [1 ,2 ]
Yuan, Guo-Dong [1 ,2 ]
Yang, Xiao-Bao [1 ,2 ]
Zhang, Rui-Qin [1 ,2 ]
Zhang, Wen-Jun [1 ,2 ]
Lee, Shuit-Tong [1 ,2 ]
机构：
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
来源：
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2009年 / 48卷 / 52期
关键词：
adsorption; doping; silicon nanowires; surface passivation; transport properties; TRANSPORT-PROPERTIES; BUILDING-BLOCKS; FABRICATION; TRANSISTORS; NANOBELTS; ARRAYS; FILMS;
D O I：
10.1002/anie.200904890
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Staying on top: Altering the surface of silicon nanowires (SiNWs) by terminating the surface with different species and/or introducing surface adsorbates can change the electrical properties of the SiNWs. Such easy, nondestructive conductivity modification would expand possible applications of SiNWs. © 2009 Wiley-VCH Verlag GmbH & Co. KGaA.
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收藏
页码：9896 / 9900
页数：5
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