AKS doped tungsten wires-investigated by electrical measurements II. Impurities in tungsten

被引:10
作者
Uray, L [1 ]
机构
[1] Hungarian Acad Sci, Res Inst TEch Phys & Mat Sci, H-1525 Budapest, Hungary
基金
匈牙利科学研究基金会;
关键词
tungsten; electrical resistivity; thermoelectric power; segregation; oxidation;
D O I
10.1016/S0263-4368(02)00032-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Al, K, Si doped tungsten wires contain several minor impurities (in the ppm range), which are usually measured by chemical analysis. The excess electrical resistivity measures only those impurities, which are present in solute form. However, this property enables the resistivity to follow solution-dissolution processes, and solute interactions with lattice defects. Combining the resistivity measurements e.g. by thermoelectric power, it helps separating several kinds of solute impurities from each other. Processes like segregation-desegregation (Fe, Co), oxidation-reduction (At, Si), and the development of the stationary evaporation profile, can be studied as well. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:319 / 326
页数:8
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