Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

被引:299
作者
Dhanabalan, Sathish Chander [1 ,2 ,3 ,4 ]
Ponraj, Joice Sophia [3 ,4 ,5 ]
Guo, Zhinan [1 ,2 ]
Li, Shaojuan [3 ,4 ]
Bao, Qiaoliang [3 ,4 ,6 ]
Zhang, Han [1 ,2 ]
机构
[1] Shenzhen Univ, Coll Elect Sci & Technol, Minist Educ & Guangdong Prov,Key Lab Optoelect De, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Coll Optoelect Engn, Shenzhen 518060, Peoples R China
[3] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China
[4] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China
[5] Bharathiar Univ, Dept Nanosci & Technol, Coimbatore 641046, Tamil Nadu, India
[6] Monash Univ, Dept Mat Sci & Engn, Wellington Rd, Clayton, Vic 3800, Australia
基金
中国国家自然科学基金;
关键词
LAYER BLACK PHOSPHORUS; FIELD-EFFECT TRANSISTORS; INPLANE THERMAL-CONDUCTIVITY; SATURABLE ABSORBER; LIQUID-EXFOLIATION; SINGLE-CRYSTALS; IONIC LIQUIDS; LARGE-SCALE; PHOTORESPONSE PROPERTIES; POTENTIAL APPLICATION;
D O I
10.1002/advs.201600305
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The challenge of science and technology is to design and make materials that will dominate the future of our society. In this context, black phosphorus has emerged as a new, intriguing two-dimensional (2D) material, together with its monolayer, which is referred to as phosphorene. The exploration of this new 2D material demands various fabrication methods to achieve potential applications- this demand motivated this review. This article is aimed at supplementing the concrete understanding of existing phosphorene fabrication techniques, which forms the foundation for a variety of applications. Here, the major issue of the degradation encountered in realizing devices based on few-layered black phosphorus and phosphorene is reviewed. The prospects of phosphorene in future research are also described by discussing its significance and explaining ways to advance state-of-art of phosphorene-based devices. In addition, a detailed presentation on the demand for future studies to promote well-systemized fabrication methods towards large-area, high-yield and perfectly protected phosphorene for the development of reliable devices in optoelectronic applications and other areas is offered.
引用
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页数:32
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