Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

被引：5

作者：

Nazarov, ANH

Osiyuk, IN

Lysenko, VS

Gebel, T

Rebohle, L

Skorupa, W

机构：

[1] NASU, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 9-11期

关键词：

D O I：

10.1016/S0026-2714(02)00170-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

uring the constant current operation regime of electroluminescent Ge+ implanted SiO2-Si structures trapping of negative and generation of positive charges in oxide, creation of surface and border traps located in and near the SiO2 - Si interface are studied. Parameters and location of deep electron and hole traps in the oxide have been determined. Effect of Ge atom location on the Ge+ implanted SiO2-Si structures degradation is discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1461 / 1464

页数：4

共 5 条

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