High-power AlGaInAs/GaAs microstack laser bars

被引：6

作者：

Hanke, C ^{[1
]}

Korte, L ^{[1
]}

Acklin, B ^{[1
]}

Behringer, M ^{[1
]}

Herrmann, G ^{[1
]}

Luft, J ^{[1
]}

De Odorico, B ^{[1
]}

Marchiano, M ^{[1
]}

Wilhelmi, J ^{[1
]}

机构：

[1] Infineon Technol Corp Res, Munich, Germany

来源：

IN-PLANE SEMICONDUCTOR LASERS IV | 2000年 / 3947卷

关键词：

semiconductor laser arrays; InGaAlAs; micro-stack; tunnel junction; high power; qcw operation;

D O I：

10.1117/12.382106

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The maximum useful optical power of laser bars is limited due to thermal and lifetime constraints to typical values of 50 W/cm cw or 120 W/cm qcw. A promising new approach is the so-called microstack laser in which several laseractive areas are integrated vertically in the same monolithic structure. In order to drive these structures in series with high efficiency low-resistance tunnel-junctions have to be realized. By optimizing the MOVPE growth process tunnel-junctions with a specific differential resistivity of 2.5x10(-4) Omega cm(2) could be obtained, which are suitable for the monolithic inter-connection of laser structures. We realized microstack lasers with two and three active zones for the 800 nm and 900 nm band in the InGaAlAs/GsAs-system using conventional LOC-SCH-structures. Compared to reference lasers with only one laser active structure a slight increase in threshold current can be observed, which is attributed to an increased current spreading due to the highly conducting tunnel junction. The W-characteristics show turn-on voltages corresponding to the number of active layers and there is no significant additional potential barrier due to the tunnel-junctions detectable. The differential efficiency scales with the number of laser junctions. AR/HR coated lasers with two or three junctions show efficiencies at 800 nm of 2.2 W/A and 3.1 W/A respectively. Mounted I cm-laserbars with an asymmetrically coated double microstack-structure have been operated up to 95 W cw and 240 W qcw with 20% duty cycle. Due to the high slope efficiency (2.1 W/A) and the low series resistance the wallplug efficiency exceeds 50 %. qcw-lifetests at 210 W with 20 % duty-cycle showed only small degradation up to 5 Gshot.

引用

页码：50 / 57

页数：8

共 2 条

[1] Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser [J].