A 1.2 V reactive-feedback 3.1-10.6 GHz ultrawideband low-noise amplifier in 0.13 μm CMOS

被引：14
|
作者：
Reiha, Michael T. [1 ]
Long, John R. [1 ]
Pekarik, John J. [2 ]
机构：
[1] Delft Univ Technol, ERL, DIMES, NL-2628 CD Delft, Netherlands
[2] IBM Electron, Essex Jct, VT 05452 USA
来源：
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2006年
关键词：
reactive feedback; low-noise amplifier; ultrawideband; monolithic transformer; bias current re-use;
D O I：
10.1109/RFIC.2006.1651086
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 15.1dB gain, 2.1dB noise figure (min.), lownoise amplifier (LNA) fabricated in 0.13 mu m CMOS covers the entire 3.1-10.6GHz ultrawideband (UWB). Noise figure variation across this band is limited to +/- 0.43dB. Reactive feedback reduces the noise figure, stabilizes the gain, and sets the terminal impedances over the prescribed bandwidth. Bias current re-use limits power consumption of the 0.87mm(2) IC to 9mW from a 1.2V supply.
引用
收藏
页码：41 / 44
页数：4
相关论文
共 50 条
  • [1] A 1.2 V reactive-feedback 3.1-10.6 GHz ultrawideband low-noise amplifier in 0.13 μm CMOS
    Reiha, Michael T.
    Long, John R.
    Pekarik, John J.
    2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2006, : 55 - +
  • [2] A 1.2 V reactive-feedback 3.1-10.6 GHz low-noise amplifier in 0.13 μm CMOS
    Reiha, Michael T.
    Long, John R.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (05) : 1023 - 1033
  • [3] A low power and high linearity UWB low noise amplifier (LNA) for 3.1-10.6 GHz wireless applications in 0.13 μm CMOS process
    Rastegar, Habib
    Saryazdi, Saeed
    Hakimi, Ahmad
    MICROELECTRONICS JOURNAL, 2013, 44 (03) : 201 - 209
  • [4] A Low power UWB CMOS Low Noise Amplifier for 3.1-10.6 GHz in Receivers
    Mahdavi, Amir
    Geran, Fatemeh
    2016 8TH INTERNATIONAL SYMPOSIUM ON TELECOMMUNICATIONS (IST), 2016, : 596 - 600
  • [5] A 0.18μm CMOS low noise amplifier using a current reuse technique for 3.1-10.6 GHz UWB receivers
    王春华
    万求真
    半导体学报, 2011, 32 (08) : 74 - 79
  • [6] A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers
    Shi, Bo
    Chia, Michael Yan Wah
    2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2006, : 57 - 60
  • [7] A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers
    Shi, Bo
    Chia, Yan Wah
    2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2006, : 71 - +
  • [8] A 0.18 mu m CMOS low noise amplifier using a current reuse technique for 3.1-10.6 GHz UWB receivers
    Wang Chunhua
    Wan Qiuzhen
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (08)
  • [9] 1.8-V 3.1-10.6-GHz CMOS low-noise amplifier for ultra-wideband applications
    Lu, Y
    Yeo, KS
    Ma, JG
    Do, MA
    Lu, ZH
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2005, 44 (03) : 299 - 302
  • [10] Design of 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique
    Wan, Qiuzhen
    Wang, Chunhua
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2011, 65 (12) : 1006 - 1011
12345