Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors

被引：48

作者：

Alessandri, Cristobal ^{[1
,2
]}

Pandey, Pratyush ^{[1
]}

Abusleme, Angel ^{[2
]}

Seabaugh, Alan ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Pontificia Univ Catolica Chile, Dept Elect Engn, Santiago 7820436, Chile

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 08期

基金：

美国国家科学基金会;

关键词：

Ferroelectric (FE); hafnium zirconate (HZO); Monte Carlo; nucleation-limited switching (NLS); KINETICS;

D O I：

10.1109/TED.2019.2922268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric (FE) materials are being studied for a variety of applications in memory, logic, and neuromorphic computing, for which predictive models of FE polarization are essential. In this paper, we present a Monte Carlo simulation framework capable of predicting the dynamic, history-dependent response of an FE under arbitrary input waveforms. The simulation is developed by generalizing the physics-based nucleation-limited switching model for polarization reversal in a polycrystalline FE. Measured polarization reversal data from fabricated FE Hf0.5Zr0.5O2 capacitors are used to extract the statistical distribution of FE grains. After parameter extraction, the model is able to predict the dynamics of the FE capacitor without further calibration. Finally, the model is applied to characterize the dynamic response of FE-dielectric bilayer structures and quantify the reduction in memory window due to device variability.

引用

页码：3527 / 3534

页数：8

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