High-resolution lithography based on selective removal of atoms

被引：5

作者：

Domantovskii, A. G. ^{[1
]}

Gurovich, B. A. ^{[1
]}

Maslakov, K. I. ^{[1
]}

机构：

[1] Kurchatov Inst, Russian Res Ctr, Moscow 123182, Russia

来源：

CRYSTALLOGRAPHY REPORTS | 2006年 / 51卷 / Suppl 1期

关键词：

61.68.+n;

D O I：

10.1134/S1063774506070285

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new method of high-resolution lithography based on selective removal of atoms is described. Drawbacks of lift-off lithography in comparison with the method proposed are pointed out and test structures of metal (Mo) stripes with a thickness of 50 nm are obtained.

引用

页码：S196 / S199

页数：4