The gain, photon detection efficiency and excess noise factor of multi-pixel Geiger-mode avalanche photodiodes

被引：38
作者：
Musienko, Y. [1 ]
Reucroft, S. [1 ]
Swain, J. [1 ]
机构：
[1] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 567卷 / 01期
关键词：
silicon avalanche photodiodes; light detection; pixellated detectors;
D O I：
10.1016/j.nima.2006.05.214
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this work we propose a method to characterize multi-pixel Geiger-mode (MPGM) avalanche photodiodes (APDs) and present systematic studies of new devices from three different manufacturers. The basic properties of MGPM APDs such as gain, photon detection efficiency, excess noise factor and noise, as well as their dependence on operating voltage have been measured. Spectral response was measured in the range 350-800nm. It was shown that despite very good pixel-to-pixel gain uniformity, the excess noise factor of these APDs can be significantly greater than 1. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：57 / 61
页数：5
相关论文
共 7 条
  • [1] AKINDINOV A, 2004, P 8 ICATPP C ADV TEC
  • [2] Limited Geiger-mode microcell silicon photodiode: new results
    Bondarenko, G
    Buzhan, P
    Dolgoshein, B
    Golovin, V
    Guschin, E
    Ilyin, A
    Kaplin, V
    Karakash, A
    Klanner, R
    Pokachalov, V
    Popova, E
    Smirnov, K
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 442 (1-3) : 187 - 192
  • [3] Silicon photomultiplier and its possible applications
    Buzhan, P
    Dolgoshein, B
    Filatov, L
    Ilyin, A
    Kantzerov, V
    Kaplin, V
    Karakash, A
    Kayumov, F
    Klemin, S
    Popova, E
    Smirnov, S
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 504 (1-3) : 48 - 52
  • [4] GASANOV AG, 1990, PISMA ZH TEKH FIZ+, V16, P14
  • [5] ON THE BREMSSTRAHLUNG ORIGIN OF HOT-CARRIER-INDUCED PHOTONS IN SILICON DEVICES
    LACAITA, AL
    ZAPPA, F
    BIGLIARDI, S
    MANFREDI, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) : 577 - 582
  • [6] TRIGGERING PHENOMENA IN AVALANCHE-DIODES
    OLDHAM, WG
    SAMUELSON, RR
    ANTOGNETTI, P
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (09) : 1056 - +
  • [7] Super-sensitive avalanche silicon photodiode with surface transfer of charge carriers
    Sadygov, ZY
    Jejer, VN
    Musienko, YV
    Sereda, TV
    Stoikov, AV
    Zheleznykh, IM
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 504 (1-3) : 301 - 303
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