Nanostructured polymer brushes

被引:75
|
作者
Schmelmer, Ursula
Paul, Anne
Kueller, Alexander
Steenackers, Marin
Ulman, Abraham
Grunze, Michael
Goelzhaeuser, Armin
Jordan, Rainer
机构
[1] Tech Univ Munich, Lehrstuhl Makromol Stoffe, D-85747 Garching, Germany
[2] Heidelberg Univ, Lehrstuhl Angew Phys Chem, D-69120 Heidelberg, Germany
[3] Polytech Univ, Dept Chem Chem Engn & Mat Sci, Brooklyn, NY 11201 USA
[4] Univ Bielefeld, Lehrstuhl Phys Supramol Syst, D-33615 Bielefeld, Germany
关键词
nanolithography; patterning; polymer brushes; polymerization;
D O I
10.1002/smll.200600528
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nanopatterned polymer brushes with sub-50-nm resolution were prepared by a combination of electron-beam chemical lithography (EBCL) of self-assembled monolayers (SAMs) and surface-initiated photopolymerization (SIPP). As a further development of our previous work, selective EBCL was performed with a highly focused electron beam and not via a mask, to region-selectively convert a SAM of 4'-nitro-1,1'-biphenyl-4-thiol to defined areas of crosslinked 4'-amino-1,1'-biphenyl-4-thiol. These "written" structures were then used to prepare surface-bonded, asymmetric, azo initiator sites of 4'-azomethylmalonodinitrile-1,1'-biphenyl-4-thiol. In the presence of bulk styrene, SIPP amplified the primary structures of line widths from 500 to 10 nm to polystyrene structures of line widths 530 nm down to approximately 45 nm at a brush height of 10 or 7 nm, respectively, as measured by scanning electron microscopy and atomic force microscopy (A FM). The relative position of individual structures was within a tolerance of a few nanometers, as verified by AFM. At line-to-line spacings down to 50-70 nm, individual polymer brush structures are still observable. Below this threshold, neighboring structures merge due to chain overlap.
引用
收藏
页码:459 / 465
页数:7
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