Photoluminescence fatigue of ZnSe semiconductor under ultraviolet irradiation

被引：4

作者：

Liem, NQ ^{[1
]}

Lee, JI

Quang, VX

Thanh, DX

Kim, D

Son, JS

Noh, SK

机构：

[1] Natl Ctr Nat Sci & Technol Vietnam, Inst Mat Sci, Hanoi, Vietnam

[2] Korea Res Inst Stand & Sci, Spectroscopy Lab, Taejon 305600, South Korea

[3] Korea Res Inst Stand & Sci, Natl Creat Res Initiat Ctr Ultrafast Opt Characte, Taejon 305600, South Korea

[4] Korea Res Inst Stand & Sci, Thin Film Grp, Taejon 305600, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

ZnSe; photoluminescence spectra; UV irradiation; photoluminescence fatigue; photo-generated carriers; photo-induced traps;

D O I：

10.1016/S0022-0248(00)00126-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

At low temperature, ZnSe emits strongly the near-band-edge luminescence consisting of the excitonic emissions and defect-related ones. However, it was observed that these emission lines are strongly fatigued under ultraviolet irradiation. Based on various experiments, we propose a mechanism of photo-induced traps to explain the photoluminescence fatigue phenomenon. These traps are created or enhanced in ZnSe by irradiation of the ultraviolet light with photon energy much above the band gap energy of cubic ZnSe, (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：441 / 446

页数：6

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