Mg incorporation in AlGaN layers grown on grooved sapphire substrates

被引：0

作者：

Cherns, D ^{[1
]}

Baines, MQ

Wang, YQ

Liu, R

Ponce, FA

Amano, H

Akasaki, I

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[3] Meijo Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 234卷 / 03期

关键词：

D O I：

10.1002/1521-3951(200212)234:3<850::AID-PSSB850>3.0.CO;2-G

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transmission electron microscopy has been used to examine tile spatial distribution of Mg-related precipitates in an Al0.03Ga0.97N layer grown by metal-organic chemical vapour deposition on a grooved sapphire substrate. It is shown that Mg precipitation takes place in vertical. but not in lateral, growth sectors. Evidence is presented for Mg segregation to edge and mixed dislocations leading to these dislocations having hollow cores Mill diameters of 1-2 nm. It is concluded that during growth Mg segregates to sinks on the (0001) surface, but not oil inclined growth facets.

引用

页码：850 / 854

页数：5