Atomic scale characterization of Mn doped InAs/GaAs quantum dots

被引：10
|
作者：
Bozkurt, M. [1 ]
Grant, V. A. [2 ]
Ulloa, J. M. [1 ]
Campion, R. P. [2 ]
Foxon, C. T. [2 ]
Marega, E. [3 ]
Salamo, G. J. [4 ]
Koenraad, P. M. [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys Photon & Semicond Nanophys, NL-5600 MB Eindhoven, Netherlands
[2] Univ Nottingham, Dept Phys & Astron, Nottingham NG7 2RD, England
[3] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Paulo, Brazil
[4] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期
关键词：
gallium arsenide; III-V semiconductors; indium compounds; manganese compounds; scanning tunnelling microscopy; segregation; semiconductor doping; semiconductor quantum dots; semimagnetic semiconductors; OPTICAL-PROPERTIES; MBE GROWTH; GAAS; LAYERS;
D O I：
10.1063/1.3293296
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent segregation makes it difficult to incorporate Mn in the QDs even at low growth temperatures of T=320 degrees C and high Mn fluxes. Mn atoms in and around QDs have been observed with strain and potential confinement changing the appearance of the Mn features.
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页数：3
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