High thermally stable Ni/Ag(Al) alloy contacts on p-GaN

被引：30

作者：

Chou, C. H. ^{[1
]}

Lin, C. L.

Chuang, Y. C.

Bor, H. Y.

Liu, C. Y.

机构：

[1] Natl Cent Univ, Dept Chem & Mat Engn, Jhongli 32001, South Korea

[2] Chung Shan Inst Sci & Technol, Mat & Electroopt Res Div, Longtan 32546, Taiwan

[3] Natl Cent Univ, Inst Mat Sci & Engn, Jhongli 32001, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

关键词：

D O I：

10.1063/1.2431577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ag agglomeration was found to occur at Ni/Ag to p-GaN contacts after annealing at 500 degrees C. This Ag agglomeration led to the poor thermal stability showed by the Ni/Ag contacts in relation to the reflectivity and electrical properties. However, after alloying with 10 at. % Al by e-gun deposition, the Ni/Ag(Al) p-GaN contacts were found to effectively retard Ag agglomeration thereby greatly enhancing the thermal stability. Based on the x-ray photoelectron spectroscopy analysis, the authors believe that the key for the retardation of Ag agglomeration was the formation of ternary Al-Ni-O layer at p-GaN interface.

引用

页数：3

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