A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

被引：36

作者：

Chen, Ying-Chen ^{[1
]}

Lin, Chao-Cheng ^{[2
]}

Hu, Szu-Tung ^{[3
]}

Lin, Chih-Yang ^{[4
]}

Fowler, Burt ^{[1
]}

Lee, Jack ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX USA

[2] Scripps Res Inst, Taiwan Semicond Res Inst, Hsinchu, Taiwan

[3] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA

[4] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

来源：

SCIENTIFIC REPORTS | 2019年 / 9卷 / 1期

关键词：

NONLINEARITY; DEVICE; MEMORY; ARRAY; RELIABILITY; BARRIER; VACANCY;

D O I：

10.1038/s41598-019-48932-5

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications.

引用

页数：6

共 43 条

[1]

Burr G. W., 2012, 2012 IEEE Symposium on VLSI Technology, P41, DOI 10.1109/VLSIT.2012.6242451

[2] Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure [J].

Chakrabarti, Somsubhra ;

Samanta, Subhranu ;

Maikap, Siddheswar ;

Rahaman, Sheikh Ziaur ;

Cheng, Hsin-Ming .

NANOSCALE RESEARCH LETTERS, 2016, 11

[3] Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer [J].

Chand, Umesh ;

Huang, Kuan-Chang ;

Huang, Chun-Yang ;

Tseng, Tseung-Yuen .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) :3665-3670

[4] Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture [J].

Chen, Frederick T. ;

Chen, Yu-Sheng ;

Wu, Tai-Yuan ;

Ku, Tzu-Kun .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (02) :223-225

[5] Decoding Pigeon Behavior Outcomes Using Functional Connections among Local Field Potentials [J].

Chen, Yan ;

Liu, Xinyu ;

Li, Shan ;

Wan, Hong .

COMPUTATIONAL INTELLIGENCE AND NEUROSCIENCE, 2018, 2018 :3505371

[6] Selector-less Graphite Memristor: Intrinsic Nonlinear Behavior with Gap Design Method for Array Applications [J].

Chen, Ying-Chen ;

Chang, Yao-Feng ;

Lee, Jack C. .

ENGINEERING CARBON HYBRIDS - CARBON ELECTRONICS 3, 2018, 85 (01) :11-19

[7] Built-in Nonlinear Characteristics of Low Power Operating One-Resistor Selector-less RRAM by Stacking Engineering [J].

Chen, Ying-Chen ;

Chang, Yao-Feng ;

Lin, Chih-Yang ;

Wu, Xiaohan ;

Xu, Gaobo ;

Fowler, Burt ;

Chang, Ting-Chang ;

Lee, Jack C. .

SELECTED PROCEEDINGS FROM THE 232ND ECS MEETING, 2017, 80 (10) :923-931

[8] Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications [J].

Chen, Ying-Chen ;

Hu, Szu-Tung ;

Lin, Chih-Yang ;

Fowler, Burt ;

Huang, Hui-Chun ;

Lin, Chao-Cheng ;

Kim, Sungjun ;

Chang, Yao-Feng ;

Lee, Jack C. .

NANOSCALE, 2018, 10 (33) :15608-15614

[9] Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application [J].

Chen, Ying-Chen ;

Lin, Chih-Yang ;

Huang, Hui-Chun ;

Kim, Sungjun ;

Fowler, Burt ;

Chang, Yao-Feng ;

Wu, Xiaohan ;

Xu, Gaobo ;

Chang, Ting-Chang ;

Lee, Jack C. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (05)

[10] Reshaping Future Computing Systems With Emerging Nonvolatile Memory Technologies [J].

Chen, Yiran .

IEEE MICRO, 2019, 39 (01) :54-57

← 1 2 3 4 5 →