A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (vol 49, pg 1427, 2002)

被引:0
作者
Palestri, P
Della Serra, A
Selmi, L
Pavesi, M
Rigolli, PL
Abramo, A
Widdershoven, F
Sangiorgi, E
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D O I
10.1109/TED.2002.804309
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1844 / 1844
页数:1
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[1]   A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors [J].
Palestri, P ;
Dalla Serra, A ;
Selmi, L ;
Pavesi, M ;
Rigolli, PL ;
Abramo, A ;
Widdershoven, F ;
Sangiorgi, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (08) :1427-1435