Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field

Bringing an elastomeric phase mask into conformal contact with a layer of photoresist makes it possible to perform photolithography in the near field of the mask, This technique provides an especially simple method for forming features with sizes of 90-100 nm in photoresist: straight lines, curved lines, and posts, on both curved and planar surfaces, It combines experimental convenience, new optical characteristics, and applicability to nonplanar substrates into a new approach to fabrication. Nanowire polarizers for visible light illustrate one application for this technique. (C) 1997 American Institute of Physics.