Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits

被引：123

作者：

Ahlbin, Jonathan R. ^{[1
]}

Massengill, Lloyd W. ^{[1
]}

Bhuva, Bharat L. ^{[1
]}

Narasimham, Balaji ^{[1
]}

Gadlage, Matthew J. ^{[1
]}

Eaton, Paul H. ^{[2
]}

机构：

[1] Vanderbilt Univ, Nashville, TN 37235 USA

[2] Microelect Res & Dev Corp, Albuquerque, NM 87110 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 06期

关键词：

Charge sharing; pulse quenching; single-event; single-event transient; single-event upset; CHARGE COLLECTION; NM CMOS; WIDTHS;

D O I：

10.1109/TNS.2009.2033689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heavy-ion broad-beam experiments on a 130 nm CMOS technology have shown anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in 90 nm and 130 nm bulk CMOS has identified a mechanism for simultaneous charge collection on proximal circuit nodes interacting in a way as to truncate, or "quench," a propagated voltage transient, effectively limiting the observed SET pulse widths at high LET. This quenching mechanism is described and analyzed.

引用

收藏

页码：3050 / 3056

页数：7

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