Study of energy transfer in gadolinium-gallium garnet crystals doped with Yb3+ and Ho3+ ions

被引：1
|
作者：
Belovolov, A. M. [1 ]
Belovolov, M. I. [1 ]
Dianov, E. M. [1 ]
Ivanov, M. A. [1 ]
Kochurikhin, V. V. [1 ]
Randoshkin, V. V. [1 ]
机构：
[1] Russian Acad Sci, Fiber Opt Res Ctr, Moscow 119991, Russia
来源：
QUANTUM ELECTRONICS | 2006年 / 36卷 / 08期
关键词：
energy transfer; sensitisation of transitions; luminescence kinetics; energy transfer microparameters;
D O I：
10.1070/QE2006v036n08ABEH013198
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The luminescence kinetics of Yb3+ donors and Ho3+ acceptors is quantitatively studied in gallium-gadolinium garnet (GGG) crystals doped with Yb3+ and Ho3+ ions. It is shown that the sensitisation of transitions in Ho3+ ions occurs due to migration-accelerated (hopping) energy transfer. The microparameters of donor-donor energy transfer are determined at 300 and 77 K. The microparameters of donor-acceptor energy transfer are found at the same temperatures at the first stage of successive sensitisation (resulting in the population of the I-5(6) state of Ho3+ ions) and at the second stage of successive sensitisation of the S-5(2), F-5(4) -> I-5(8) transition in Ho3+ ions. At the second stage of sensitisation, the values of the microparameter of reverse energy transfer are also determined. The possibility of obtaining lasing at sensitised transitions in Ho3+ ions in Yb3+ : Ho3+ : GGG crystals pumped into the absorption band of Yb3+ ions is discussed.
引用
收藏
页码：702 / 712
页数：11
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