Ion irradiation and defect formation in single layer graphene

被引:212
作者
Compagnini, Giuseppe [1 ]
Giannazzo, Filippo [2 ]
Sonde, Sushant [2 ,3 ]
Raineri, Vito [2 ]
Rimini, Emanuele [2 ,4 ]
机构
[1] Univ Catania, Dept Chem, I-95123 Catania, Italy
[2] CNR, IMM, I-95121 Catania, Italy
[3] Scuola Super Catania, I-95123 Catania, Italy
[4] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy
关键词
CARBON; GRAPHITE; LENGTH;
D O I
10.1016/j.carbon.2009.07.033
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ion irradiation by 500 keV C+ ions has been used to introduce defects into graphene sheets deposited on SiO2 in a controlled way. The combined use of Raman spectroscopy and atomic force microscopy (AFM) allowed one to clarify the mechanisms of disorder formation in single layers, bilayers and multi-layers of graphene. The ratio between the D and G peak intensities in the Raman spectra of single layers is higher than for bilayers and multi-layers, indicating a higher amount of disorder. This cannot be only ascribed to point defects, originating from direct C+-C collisions, but also the different interactions of single layers and few layers with the substrate plays a crucial role. As demonstrated by AFM, for irradiation at fluences higher than 5 x 10(13) cm(-2), the morphology of single layers becomes fully conformed to that of the SiO2 substrate, i.e. graphene ripples are completely suppressed, while ripples are still present on bilayer and multi-layers. The stronger interaction of a single layer with the substrate roughness leads to the observed larger amount of disorder. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3201 / 3207
页数:7
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