Atom structures on the Si(100) surface

被引：16

作者：

Hashizume, T

Heike, S

Lutwyche, MI

Watanabe, S

Wada, Y

机构：

[1] Advanced Research Laboratory, Hitachi Ltd., Hatoyama

来源：

SURFACE SCIENCE | 1997年 / 386卷 / 1-3期

关键词：

gallium; scanning tunneling microscopy; semiconducting surfaces; silicon; surface chemical reaction;

D O I：

10.1016/S0039-6028(97)00339-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have developed a method of fabricating metal-atom structures on a Si(100)-2 x 1-H surface by scanning tunnelling microscopy (STM). The atomic structures can be connected to bulk electrodes formed in situ of the STM. We first fabricated atomic-scale dangling-bond structures by STM manipulation of hydrogen atoms. Using the difference in adsorption energy of Ga atoms on the hydrogen terminated surface area with dangling-bond patterns, we have thermally deposited Ga atoms and fabricated atomic-scale Ga structures on the Si surface. (C) 1997 Elsevier Science B.V.

引用

页码：161 / 165

页数：5

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