Structural stability of (Ba,Sr)RuO3 electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO3 thin films

被引：2
作者：
Choi, ES
Park, SS
Yoon, SG
机构：
[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
[2] Sangju Natl Univ, Dept Adv Mat Engn, Kyungbuk 742711, South Korea
来源：
INTEGRATED FERROELECTRICS | 2002年 / 47卷
关键词：
D O I：
10.1080/10584580190044498
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
(Ba,Sr)RuO3(BSR) electrodes were deposited on n-type Si (100) substrates by liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) and their stability in a hydrogen ambient was investigated. BSR films showed the structural and morphological stability when annealed in hydrogen forming gas (4% H-2+96% balance N-2) temperatures of up to 500square. The abrupt increase of resistivity with increasing hydrogen annealing temperature can be attributed to oxygen loss in BSR films without phase change and was completely recovered by annealing at 700square in an O-2 ambient. The dielectric constant of the Pt/BSR/BST/Pt structures increased with increasing BSR interfacial layers. The dielectric constant of a BSR/BST/Pt capacitor with a 35 nm thick BST without top Pt electrode showed about 425.
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收藏
页码：31 / 40
页数：10
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