Effect of post-annealing on the band gap of sol-gel prepared nano-crystalline MgxZn1-xO (0.0 ≤ x ≤ 0.3) thin films

被引：33

作者：

Meher, S. R. ^{[1
]}

Biju, Kuyyadi P. ^{[1
]}

Jain, Mahaveer K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2009年 / 52卷 / 02期

关键词：

MgZnO; Sol-gel; Thin film; Annealing; Band gap; STRUCTURAL-PROPERTIES; MULTIQUANTUM WELLS; OPTICAL-PROPERTIES; ALLOY-FILMS; ZNO; SEMICONDUCTOR; EMISSION; HETEROSTRUCTURES; DEPOSITION; GROWTH;

D O I：

10.1007/s10971-009-2032-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Polycrystalline MgxZn1-xO (MZO) thin films on glass substrates were prepared by sol-gel method. All the films retained the hexagonal wurtzite structure of ZnO. The band gap values determined from transmission spectra were found to be smaller than the values obtained from Vegard's law for the as-deposited MZO films. For the films with x = 0.1, 0.2 and 0.3, the band gap blue-shifted initially and then red-shifted with increase in the annealing temperature. The reason for this anomalous shift in the band gap is attributed to the proper substitution of Mg atoms into the Zn lattice sites after a certain critical annealing temperature.

引用

页码：228 / 234

页数：7

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