Effects of Stress and Morphology on the Resistivity and Critical Temperature of Room-Temperature-Sputtered Mo Thin Films

被引:28
作者
Fabrega, Lourdes [1 ]
Fernandez-Martinez, Ivan [2 ]
Parra-Borderias, Maria [5 ,6 ]
Gil, Oscar [1 ]
Camon, Agustin [5 ,6 ]
Gonzalez-Arrabal, Raquel [2 ,4 ]
Sese, Javier [3 ]
Santiso, Jose [7 ]
Costa-Kraemer, Jose-Luis [2 ]
Briones, Fernando [2 ]
机构
[1] CSIC, Inst Ciencia Mat Barcelona, E-08193 Barcelona, Spain
[2] CSIC, Inst Microelect Madrid, Madrid 28760, Spain
[3] Univ Zaragoza, Inst Nanociencia Aragon, E-50009 Zaragoza, Spain
[4] ETSI, Inst Fus Nucl, Madrid 28006, Spain
[5] Univ Zaragoza, Dept Fis Mat Condensada, CSIC, E-50009 Zaragoza, Spain
[6] Univ Zaragoza, Inst Ciencia Mat Aragon, CSIC, E-50009 Zaragoza, Spain
[7] CSIC, Inst Catala Nanotecnol, CIN2, E-08193 Barcelona, Spain
关键词
Conductivity; sputtering; stress; superconducting films; TRANSITION-EDGE SENSORS; DEPOSITED MOLYBDENUM FILMS; FABRICATION; MICROSTRUCTURE; TANDETRON(TM); TUNGSTEN;
D O I
10.1109/TASC.2009.2027609
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the structural and electrical characterization of Mo thin films deposited at room temperature by RF magnetron sputtering. The effect of RF power on the morphology and residual stress of the films is analyzed. The films are under compressive stress and consist of densely packed columns with a lateral size on the order of 20 mm. The stress, critical temperature, and resistivity of the films are found to rise when increasing the ejected ion energy during the sputtering process. The changes in critical temperature and resistivity are discussed in terms of the observed morphology and stress changes.
引用
收藏
页码:3779 / 3785
页数:7
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