Effects of nanowire coalescence on their structural and optical properties on a local scale

被引：82

作者：

Consonni, V. ^{[1
]}

Knelangen, M. ^{[1
]}

Jahn, U. ^{[1
]}

Trampert, A. ^{[1
]}

Geelhaar, L. ^{[1
]}

Riechert, H. ^{[1
]}

机构：

[1] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 24期

关键词：

cathodoluminescence; dislocations; excitons; gallium compounds; III-V semiconductors; nanowires; nucleation; stacking faults; transmission electron microscopy; wide band gap semiconductors; MOLECULAR-BEAM EPITAXY; SPONTANEOUS GROWTH; GAN NANOWIRES; NANOCOLUMNS; MECHANISM; SI(111); ALN;

D O I：

10.1063/1.3275793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of GaN nanowire coalescence have been investigated on a local scale by combining high-resolution transmission electron microscopy imaging with spatially resolved cathodoluminescence measurements. Coalescence induces the formation of a network of boundary dislocations, above which I(1)-type basal-plane stacking faults are nucleated. The former contributes to the reduction in the crystalline quality at the bottom of coalesced nanowires while the latter leads to intense excitonic radiative transitions at 3.42 eV in their center. Despite coalescence, the top of coalesced nanowires presents a very high crystalline quality, resulting in strong radiative recombinations of donor bound excitons at 3.47 eV.

引用

页数：3

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