Carrier heating in disordered organic semiconductors

被引:36
作者
Preezant, Yevgeni
Tessler, Nir [1 ]
机构
[1] Technion Israel Inst Technol, Dept Elect Engn, Ctr Microelect, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Dept Elect Engn, Nanoelect Ctr, IL-32000 Haifa, Israel
关键词
D O I
10.1103/PhysRevB.74.235202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a semi-implicit model for hopping transport in disordered media with application to organic semiconductors. The results show excellent agreement with both Monte Carlo and standard master-equation calculations. In organic LEDs the applied field would result in heating of the charge carrier population by up to 100 degrees C above the lattice temperature and is more effective at lower temperatures. We show that the voltage dependence of the mobility in space charge limited LEDs is largely due to carrier heating and not to the previously considered charge density or barrier lowering effects. At the end we look into the effect of accounting for the soft nature of organic materials via the inclusion of polaronic rate (binding energy) and we find that carrier heating is suppressed at polaron binding energies above 0.1 eV.
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页数:5
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