Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects

被引：34

作者：

Crupi, Giovanni ^{[1
]}

Schreurs, Dominique M. M. -P. ^{[2
]}

Caddemi, Alina ^{[1
]}

Angelov, Iltcho ^{[3
]}

Homayouni, Majid ^{[2
]}

Raffo, Antonio ^{[4
]}

Vannini, Giorgio ^{[4
]}

Parvais, Bertrand ^{[5
]}

机构：

[1] Univ Messina, Dipartimento Fis Mat & Ingn Elettron, I-98166 Messina, Italy

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

[3] Chalmers Univ Technol, Dept Microwave Technol, S-41296 Gothenburg, Sweden

[4] Univ Ferrara, Dept Engn, I-44100 Ferrara, Italy

[5] IMEC, B-3001 Leuven, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 11期

关键词：

FinFET; Large signal network analyzer; Nonlinear model; Non-quasi-static effects; Semiconductor device modeling; SIGNAL; PARAMETERS; ACCURATE;

D O I：

10.1016/j.mee.2009.04.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2283 / 2289

页数：7

共 28 条

[1] An empirical table-based FET model [J].