DEPENDENCE OF PHOTOCONDUCTIVITY ON THE ELECTRICAL FIELD IN n-InSe

被引：0
|
作者：
Babayeva, R. F. [1 ]
机构：
[1] Azerbaijan State Univ Econ UNEC, Istiqlaliyyat Ave 6, AZ-1001 Baku, Azerbaijan
来源：
MODERN TRENDS IN PHYSICS | 2019年
关键词：
single crystal; semiconductor; intrinsic photoconductivity;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The main characteristics of photoconductivity in indium monoselenide crystals with different initial dark resistivity were experimentally investigated at temperatures of 77 divided by 300 K and electric field strengths of E <= 2.5.10(3) V/cm. In high-resistance crystals at temperatures below 200 divided by 250 K, under the action of an electric voltage corresponding to a non-linear region of a static I-V characteristic, the effect of an electric field on the photoconductivity was detected. A model is proposed that qualitatively satisfactorily explains the experimental results obtained.
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页码：20 / 23
页数：4
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