A D-band SiGe Frequency Doubler with a Harmonic Reflector Embedded in a Triaxial Balun

被引：0

作者：

Rao, Sunil G. ^{[1
]}

Frounchi, Milad ^{[1
]}

Cressler, John D. ^{[1
]}

机构：

[1] Georgia Tech, Sch Elect & Comp Engn, 777 Atlantic Dr NW, Atlanta, GA 30332 USA

来源：

2020 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2020年

关键词：

Power generation; Silicon germanium; Heterojunction bipolar transistors; Power amplifiers; Millimeter wave integrated circuits;

D O I：

10.1109/rfic49505.2020.9218283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a SiGe push-push frequency doubler with a triaxial balun embedded harmonic reflector. An input triaxial balun is used to generate differential signals for the push-push core, while also providing a high quality 2nd harmonic reflector. Two frequency doublers were designed in a 90nm SiGe BiCMOS platform, both with and without an output buffer. The buffer-less design achieves a record peak output power and efficiency of 9.4dBm and 12.1% at 130 GHz, with a bandwidth of 128-140 GHz. The buffered design achieves a peak output power of 8.85dBm and 8.8% efficiency, while operating over a wider bandwidth.

引用

页码：255 / 258

页数：4

共 35 条

[11] A SiGe HBT D-Band LNA Utilizing Asymmetric Broadside Coupled Lines [J].

Moradinia, Arya ;

Rao, Sunil G. ;

Cressler, John D. .

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (06) :707-710

[12] D-Band Dicke-Radiometer in 90 nm SiGe BiCMOS Technology [J].

Ben Yishay, Roee ;

Elad, Danny .

2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, :1957-1960

[13] A D-Band Reflective-Type Phase Shifter Using a SiGe PIN Diode Resonant Load [J].

Rao, Sunil G. ;

Cressler, John D. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (10) :1191-1194

[14] A Digitally Controlled D-Band Phase Shifter for FMCW Radar and RadCom in SiGe BiCMOS [J].

Schrotz, Albert-Marcel ;

Breun, Sascha ;

Schoenhaerl, Stefan ;

Weigel, Robert .

2024 IEEE WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE, WAMICON, 2024,

[15] A 7.2-mW V-Band Frequency Doubler With 14% Total Efficiency in 130-nm SiGe BiCMOS [J].

Sutbas, Batuhan ;

Kahmen, Gerhard .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (06) :579-582

[16] An Automotive D-Band FMCW Radar Sensor Based on a SiGe-Transceiver MMIC [J].

Sene, Badou ;

Reiter, Daniel ;

Knapp, Herbert ;

Li, Hao ;

Braun, Tobias ;

Pohl, Nils .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (03) :194-197

[17] A D-Band SiGe Power Amplifier Using a Four-Way Coupled-Line Wilkinson Combiner [J].

Rao, Sunil G. ;

Cressler, John D. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (11) :1239-1242

[18] Key Components of a D-Band Dicke-Radiometer in 90 nm SiGe BiCMOS Technology [J].

Ben Yishay, Roee ;

Shumaker, Evgeny ;

Elad, Danny .

2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, :176-179

[19] Design and Linearity Analysis of a D-band Power Amplifier in 0.13 μm SiGe BiCMOS Technology [J].

Hu, Z. ;

Sarris, G. ;

De Martino, C. ;

Spirito, M. ;

McCune, E. .

2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2017,

[20] A SiGe D-Band Low-Noise Amplifier Utilizing Gain-Boosting Technique [J].

Ulusoy, A. Cagri ;

Song, Peter ;

Khan, Wasif T. ;

Kaynak, Mehmet ;

Tillack, Bernd ;

Papapolymerou, John ;

Cressler, John D. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2015, 25 (01) :61-63

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