Tunable slow light device using quantum dot semiconductor laser

被引：13

作者：

Peng, P. C. ^{[1
]}

Lin, C. T.

Kuo, H. C.

Tsai, W. K.

Liu, J. N.

Chi, S.

Wang, S. C.

Lin, G.

Yang, H. P.

Lin, K. F.

Chi, J. Y.

机构：

[1] Natl Chi Nan Univ, Dept Appl Math & Optoelect Engn, Nantou, Hsien, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[4] Ind Technol Res Inst, Optoelect & Syst Lab, Hsinchu 31015, Taiwan

来源：

OPTICS EXPRESS | 2006年 / 14卷 / 26期

关键词：

D O I：

10.1364/OE.14.012880

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mu m fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system. (C) 2006 Optical Society of America.

引用

页码：12880 / 12886

页数：7

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