Preparation and characterization of epitaxial lead zirconate titanate films on Pt/MgO substrates by metalorganic chemical vapor deposition

被引：11

作者：

Sakurai, A

Shiratsuyu, K

Takagi, H

Sakabe, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 9B期

关键词：

MOCVD; PZT; thin film; MgO; Pt; epitaxial growth; ferroelectrics; D-E hysteresis loop;

D O I：

10.1143/JJAP.36.5812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lead zirconate titanate (PZT) films were prepared on Pt(100)/MgO(100) substrates by metalorganic chemical vapor deposition. By optimizing the deposition conditions, c-axis oriented PZT epitaxial films were obtained. The epitaxial PZT films deposited on Pt/MgO substrates exhibited dielectric constants as high as 425, remanent polarization of 50 mu C/cm(2), a coercive field of 33 kV/cm a leakage-current smaller than 10(-6) A/cm(2) at the electric field lower than 200 kV/cm.

引用

页码：5812 / 5814

页数：3

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