Radiation damage of Ge-on-Si devices

被引：1

作者：

Ohyama, H. ^{[1
]}

Sakamoto, K. ^{[1
]}

Sukizaki, H. ^{[1
]}

Takakura, K. ^{[1
]}

Hayama, K. ^{[1
]}

Motoki, M. ^{[1
]}

Matsuo, K. ^{[1
]}

Nakamura, H. ^{[2
]}

Sawada, M. ^{[3
]}

Midorikawa, M. ^{[4
]}

Kuboyama, S. ^{[4
]}

De Jaeger, B. ^{[5
]}

Simoen, E. ^{[5
]}

Claeys, C. ^{[5
,6
]}

机构：

[1] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan

[2] Tokyo Cathode Lab Co Ltd, Kumamoto 8612401, Japan

[3] Hanwa Elect Ind Co Ltd, Wakayama 6496272, Japan

[4] JAXA, Tsukuba, Ibaraki 3058505, Japan

[5] IMEC, B-3001 Louvain, Belgium

[6] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2008年 / 11卷 / 5-6期

关键词：

Ge diode; Ge transistor; Electron; Proton; Irradiation; Radiation damage; Degradation;

D O I：

10.1016/j.mssp.2008.08.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radiation damage induced by 2-MeV electrons and 70-MeV protons in p(+)n diodes and p-channel MOS transistors, fabricated in epitaxial Ge-on-Si substrates is reported for the first time. For irradiation above 5 x 10(15) e/cm(2), it is noted that both the reverse and forward current increase, and that the forward current is lower after irradiation for a forward voltage larger than about 0.5 V. The reason for this might be an increased resistivity of the Ge-on-Si substrate. For p-MOSFETs, for a 1 x 10(16) e/cm(2) dose, a slight negative shift of the threshold voltage and a decrease of the drain current for input and output characteristics have been observed. In addition, g(m) decreases after irradiation. The degradation of the transistor performance is thought to be due to irradiation-induced positive charges in the high-kappa gate dielectric. The induced lattice defects are also mainly responsible for the leakage current increase of the irradiated diodes. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：217 / 220

页数：4

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