Structure determination of the Si(001)-(2 x 1)-H reconstruction by surface X-ray diffraction: weakening of the dimer bond by the addition of hydrogen

被引:17
作者
Lauridsen, EM [1 ]
Baker, J
Nielsen, M
Feidenhans'l, R
Falkenberg, G
Bunk, I
Zeysing, JH
Johnson, RL
机构
[1] Riso Natl Lab, Condensed Matter Phys & Chem Dept, DK-4000 Roskilde, Denmark
[2] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany
关键词
hydrogen atom; silicon; surface relaxation and reconstruction; X-ray scattering; diffraction; and reflection;
D O I
10.1016/S0039-6028(00)00314-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The atomic structure of the monohydride Si(001)-(2 x 1)-H reconstruction has been investigated by surface X-ray diffraction. Atomic relaxations down to the eighth layer have been determined. The bond length of the hydrogenated silicon dimers was found to be 2.47 +/- 0.02 Angstrom. which is longer than the dimer bond of the clean (2 x 1)-reconstructed Si(001) surface and also 5% longer than the bulk bond length of 2.35 Angstrom. The differences to the (2 x 1) structure of the clean surface are discussed in terms of the elimination of the weak pi-bond character of the dimer bond by the addition of hydrogen. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
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页码:18 / 24
页数:7
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