Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

被引：0

作者：

Huang Yue ^{[1
]}

Gou Hong-Yan ^{[1
]}

Sun Qing-Qing ^{[1
]}

Ding Shi-Jin ^{[1
]}

Zhang Wei ^{[1
]}

Zhang Shi-Li ^{[1
,2
]}

机构：

[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Royal Inst Technol, Sch Informat & Commun, KTH, SE-16440 Kista, Sweden

来源：

CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 10期

基金：

国家高技术研究发展计划(863计划);

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 x 10(11) cm(-2) and a diameter range of 5-8 nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for +/- 11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 x 10(-8) A/cm(-2) at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.

引用

页数：3

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