Optical and structural properties of Eu-diffused and doped ZnO nanowires

被引:19
作者
Pan, C. J. [3 ]
Chen, C. W. [4 ]
Chen, J. Y. [5 ]
Huang, P. J. [4 ]
Chi, G. C. [4 ,5 ]
Chang, C. Y. [1 ]
Ren, F. [2 ]
Pearton, S. J. [1 ]
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] Natl Cent Univ, Ctr Opt Sci, Tao Yuan 32001, Taiwan
[4] Natl Cent Univ, Dept Phys, Tao Yuan 32001, Taiwan
[5] Natl Cent Univ, Dept Opt & Photon, Tao Yuan 32001, Taiwan
基金
美国国家科学基金会;
关键词
ZnO nanowires; BEAM EPITAXY; GAN; PHOTOLUMINESCENCE; GROWTH; FILMS; TM; NANOCRYSTALS; TEMPERATURE; ER;
D O I
10.1016/j.apsusc.2009.07.108
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single crystal ZnO nanowires diffused with europium (Eu) from a solid source at 900 degrees C for 1 h or doped with Eu during growth have been characterized. The ZnO nanowires were grown by chemical vapor deposition on Si substrates employing Au as a catalyst. The diameter of the resulting nanowires was similar to 200 nm with a length of 1 mu m. Photoluminescence spectra excited by a He-Cd laser at room temperature showed the green luminescence at 515 nm in Eu-diffused nanowires. A small red shift of near-band-edge emission of ZnO nanowires was observed in the diffused wires, but sharp emission from Eu-3 ions was not present. Transmission electron microscopy shows crystalline Eu2O3 formation on the diffused nanowire surface, which forms a coaxial heterostructure system. When Eu was incorporated during the nanowire growth, the sharp D-5(0)-F-7(2) transition of the Eu3+ ion at around 615 nm was observed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:187 / 190
页数:4
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