Solution-growth-synthesized Cu(In,Ga)Se2 nanoparticles in ethanol bath for the applications of dye-sensitized solar cell and photoelectrochemical reaction

被引:6
作者
Cheng, Kong-Wei [1 ,2 ,3 ]
Jhang, Huei-Jhen [1 ,3 ]
Li, Chun-Ting [4 ]
Ho, Kuo-Chuan [4 ]
机构
[1] Chang Gung Univ, Dept Chem & Mat Engn, 259 Wen Hwa 1st Rd, Taoyuan 333, Taiwan
[2] Chang Gung Mem Hosp, Dept Orthopaed Surg, Keelung Branch, 5 Fu Shing St, Taoyuan 333, Taiwan
[3] Chang Gung Univ, Solar Cell Grp, Green Technol Res Ctr, 259 Wen Hwa 1st Rd, Taoyuan, Taiwan
[4] Natl Taiwan Univ, Dept Chem Engn, 1 Sec 4 Roosevelt Rd, Taipei 106, Taiwan
关键词
Dye-sensitized solar cells (DSSCs); Culn(1-x) GaxSe2 (CIGSe); Counter electrode; Photoelectrochemical reaction; ALLOY COUNTER ELECTRODES; ELECTRICAL-PROPERTIES; THIN-FILMS; II-VI; TEMPERATURE; SELENIZATION; CIGS; PERFORMANCES; PRECURSORS; DEPOSITION;
D O I
10.1016/j.jtice.2017.02.010
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
In this study, ternary CuInSe2 and quaternary Culn(1-x)Ga(x)Se(2) (CIGSe) nanoparticles (NPs) are grown in the ethanol bath using the one step solution growth method. The influence of Ga content in samples on the optical and electronic properties of the samples is investigated. Average particle sizes of samples are less than 66 nm after a 10-min. reaction in the solution. The NPs are prepared as the ink for the deposition of CIGSe samples on substrates. X-ray diffraction patterns of samples reveal that samples are the chalcopyrite CIGSe phase when the [Ga]/[ln+Ga] molar ratio in solution bath of less than 0.5. The carrier concentration and mobility of samples are in the ranges of 1.2 x 10(13)-9.1 x 10(15) cm(-3) and 1.4-205 cm(2)/V/s, respectively. The results show that the maximum photo-conversion efficiency of 7.02% for the dye-sensitized solar cells using CIGSe as the counter electrodes and the maximum photoelectrochemical performances of 0.96 mA/cm(2) at an external bias of 0.8 V vs. an Ag/AgCI electrode using the CIGSe as the photoelectrodes in salt-water solution, respectively. (C) 2017 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:136 / 145
页数:10
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